3sk41 Datasheet [patched] Jun 2026

RF signals can drive Gate 1 while a Local Oscillator (LO) injects into Gate 2. The inherent square-law characteristics of the dual-gate FET provide excellent conversion gain with remarkably low intermodulation distortion.

Enter the , a high-performance N-channel dual-gate MOSFET . Manufactured by industry giants like NEC, Hitachi, and Motorola , this tiny component became the go-to upgrade for legendary transceivers.

These electrical characteristics are critical for understanding the 3SK41's performance. The high of 200 Ω is a key characteristic of this MOSFET. The output capacitance (Coss) of 5 pF is small, allowing for the fast switching speeds necessary for VHF applications.

The control or modulation input. This is typically used for AGC biasing or local oscillator (LO) injection in mixer circuits. 3sk41 datasheet

The 3SK41 solves this by using two independent gates in a series configuration resembling a cascode circuit: acts as the primary signal input. Gate 2 ( G2cap G sub 2 ) acts as an RF shield between Gate 1 and the Drain.

. The isolated dual-gate architecture ensures excellent port-to-port isolation between the LO and RF circuits, minimizing harmonic distortion and noise cross-talk. Common Applications

VG1S(off)cap V sub cap G 1 cap S open paren o f f close paren end-sub RF signals can drive Gate 1 while a

Used for general-purpose signal conversion and switching in alarms and security systems. Datasheet Resources

VG2S(off)cap V sub cap G 2 cap S open paren o f f close paren end-sub

Operating the 3SK41 beyond these limits can cause permanent damage to the GaAs structure. Engineers must design biasing networks that keep the transistor well within these boundary thresholds at an ambient temperature ( Drain-Source Voltage VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D Total Power Dissipation PDcap P sub cap D 200 to 250 Channel Temperature Tchcap T sub c h end-sub ∘Craised to the composed with power C Storage Temperature Range Tstgcap T sub s t g end-sub -55 to +125 ∘Craised to the composed with power C 4. Electrical Characteristics Manufactured by industry giants like NEC, Hitachi, and

Unlike standard three-terminal field-effect transistors, the dual-gate architecture necessitates a four-lead layout:

The is an iconic component of the golden age of analog radio design. Its dual‑gate architecture and excellent VHF performance made it a favorite for the RF front‑ends of classic amateur radio transceivers and FM tuners. While it has been obsolete for many years, its legacy lives on through the continuing efforts of restorers who maintain and repair the equipment that contains it.

Highly compatible N-channel dual-gate alternative with matching gain characteristics.

The 3SK41 is a staple in older analog RF designs and is still used in retrofitting or specialized high-frequency kits: VHF/UHF receiver pre-amps. Mixers: High-frequency mixing in receivers. Oscillators: Local oscillators in communication equipment.